IndiumV3, Main, Repository, bibRecord, 006714

Fine structure in magnetospectrum of vertical quantum dot

Identifieur interne : 006714 ( Main/Repository ); précédent : 006713; suivant : 006715

Fine structure in magnetospectrum of vertical quantum dot

Auteurs : RBID : Pascal:08-0316557

Descripteurs français

Pascal (Inist)
- Structure fine, Structure électronique, Phénomène transport, Effet tunnel résonnant, Effet champ magnétique, Orientation champ, Effet tunnel, Niveau Landau, Etat résonnant, Phonon optique, Blocage Coulomb, Point quantique, Arséniure d'indium, Arséniure de gallium, Arséniure d'aluminium, Hétérostructure, Semiconducteur, InGaAs, AlGaAs, 8107T.

English descriptors

KwdEn :
- Aluminium arsenides, Coulomb blockade, Electronic structure, Field orientation, Fine structure, Gallium arsenides, Heterostructures, Indium arsenides, Landau levels, Magnetic field effects, Optical phonons, Quantum dots, Resonant states, Resonant tunnelling, Semiconductor materials, Transport processes, Tunnel effect.

Abstract

The electronic transport properties of a gated vertical quantum dot fabricated of an asymmetrical InGaAs/AlGaAs double-barrier resonant tunneling heterostructure are studied experimentally. At a temperature of 15mK, a series of small current peaks are observed far below the voltage of a main resonance peak. The voltage position of these peaks appeared to be strongly dependent on the presence of magnetic field oriented perpendicular to the plane of the barriers. The occurrence of the peaks is attributed to tunneling mechanisms involving inter-Landau-level resonant tunneling, longitudinal-optical (LO)-phonon-assisted tunneling and to electrostatic effects such as Coulomb blockade.

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Pascal:08-0316557

Le document en format XML

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<author><name sortKey="Agafonov, Oleksiy B" uniqKey="Agafonov O">Oleksiy B. Agafonov</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstr. 2</s1>
<s2>30167 Hannover</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Basse-Saxe</region>
<settlement type="city">Hanovre</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Kita, Tomohiro" uniqKey="Kita T">Tomohiro Kita</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Semiconductor Spintronics Project, ERA TO, JST</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Semiconductor Spintronics Project, ERA TO, JST</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrial Communication, Tohoku University</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrial Communication, Tohoku University</wicri:noRegion>
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</author>
<author><name sortKey="Ohno, Hideo" uniqKey="Ohno H">Hideo Ohno</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Semiconductor Spintronics Project, ERA TO, JST</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Semiconductor Spintronics Project, ERA TO, JST</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrial Communication, Tohoku University</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrial Communication, Tohoku University</wicri:noRegion>
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</author>
<author><name sortKey="Haug, Rolf J" uniqKey="Haug R">Rolf J. Haug</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstr. 2</s1>
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<title level="j" type="abbreviated">Physica ( E) low-dimens.  syst.  nanostrut.</title>
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<term>Coulomb blockade</term>
<term>Electronic structure</term>
<term>Field orientation</term>
<term>Fine structure</term>
<term>Gallium arsenides</term>
<term>Heterostructures</term>
<term>Indium arsenides</term>
<term>Landau levels</term>
<term>Magnetic field effects</term>
<term>Optical phonons</term>
<term>Quantum dots</term>
<term>Resonant states</term>
<term>Resonant tunnelling</term>
<term>Semiconductor materials</term>
<term>Transport processes</term>
<term>Tunnel effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Structure fine</term>
<term>Structure électronique</term>
<term>Phénomène transport</term>
<term>Effet tunnel résonnant</term>
<term>Effet champ magnétique</term>
<term>Orientation champ</term>
<term>Effet tunnel</term>
<term>Niveau Landau</term>
<term>Etat résonnant</term>
<term>Phonon optique</term>
<term>Blocage Coulomb</term>
<term>Point quantique</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'aluminium</term>
<term>Hétérostructure</term>
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<term>InGaAs</term>
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<front><div type="abstract" xml:lang="en">The electronic transport properties of a gated vertical quantum dot fabricated of an asymmetrical InGaAs/AlGaAs double-barrier resonant tunneling heterostructure are studied experimentally. At a temperature of 15mK, a series of small current peaks are observed far below the voltage of a main resonance peak. The voltage position of these peaks appeared to be strongly dependent on the presence of magnetic field oriented perpendicular to the plane of the barriers. The occurrence of the peaks is attributed to tunneling mechanisms involving inter-Landau-level resonant tunneling, longitudinal-optical (LO)-phonon-assisted tunneling and to electrostatic effects such as Coulomb blockade.</div>
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<s5>53</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>8107T</s0>
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Fine structure in magnetospectrum of vertical quantum dot

Fine structure in magnetospectrum of vertical quantum dot

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri